| PART |
Description |
Maker |
| STW12NB60 7799 |
12 A, 600 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247
CONNECTOR ACCESSORY
N-CHANNEL 600V - 0.5ohm - 12A TO-247 PowerMesh⑩II MOSFET
From old datasheet system
N-CHANNEL 600V 0.5 OHM 12A TO-247 POWERMESH MOSFET
N-CHANNEL 600V - 0.5ohm - 12A TO-247 PowerMesh?II MOSFET
N-CHANNEL 600V 0.5 OHM 12A TO-247 POWERMESH MOSFET
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| STGP12NB60H 6708 |
N-CHANNEL 12A - 600V TO-220 PowerMESH IGBT
N-CHANNEL 12A - 600V TO-220 PowerMESH IGBT
From old datasheet system
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| STW12NC60 7175 |
N-CHANNEL 600V 0.48 OHM 12A TO-247 POWERMESH II MOSFET
From old datasheet system
N-CHANNEL 600V 0.48 OHM 12A TO-247 POWERMESH II MOSFET
|
ST Microelectronics
STMicroelectronics
|
| STH13NB60FI STH13NB60 STW13NB60 |
N-CHANNEL Power MOS MOSFET
N - CHANNEL 600V - 0.48ohm - 13A - TO-247/ISOWATT218 PowerMESH MOSFET
N - CHANNEL 600V - 0.48W - 13A - TO-247/ISOWATT218 PowerMESH MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
SGS Thomson Microelectronics
|
| H12N60 |
N-Channel Power MOSFET (600V,12A)
|
Hi-Sincerity Mocroelectronics
|
| MG360V1US41 E002277 |
Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:600V; On State RMS Current, IT(rms):12A; Gate Trigger Current (QI), Igt:50mA; Current, It av:12A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes
N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)
From old datasheet system
|
Toshiba Corporation
Toshiba Semiconductor
|
| PR103W PR103K PR134K PR101W PR114K PR105KW PR125K |
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CC|800V V(RRM)|12A I(T)
THYRISTOR MODULE|BRIDGE|FULLY-CNTLD|1KV V(RRM)|12A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CC|400V V(RRM)|12A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CA|1KV V(RRM)|12A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CC|1.2KV V(RRM)|12A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|1.2KV V(RRM)|12A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CC|600V V(RRM)|12A I(T)
THYRISTOR MODULE|BRIDGE|HALF-CNTLD|CA|1.2KV V(RRM)|12A I(T)
THYRISTOR MODULE|AC SWITCH|1.2KV V(RRM)|12A I(T) 可控硅模块|交流开关| 1.2KV五（无线资源管理）| 12A条疙（T
|
Stackpole Electronics, Inc.
|
| HST12 |
TRIAC 600V,12A
|
Hi-Sincerity Mocroelectronics
|
| U12C30 U12C40 U12C50 U12C60 |
POWER RECTIFIERS(12A/300-600V)
POWER RECTIFIERS(12A,300-600V)
|
MOSPEC SEMICONDUCTOR CORP.
MOSPEC[Mospec Semiconductor]
|
| R6012ANX R6012ANX12 |
Nch 600V 12A Power MOSFET
|
Rohm
|
| SSU2N60B SSR2N60B SSR2N60 SSU2N60BTU SSR2N60BTF SS |
600V N-Channel MOSFET
600V N-Channel MOSFET 1.8 A, 600 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
600V N-Channel B-FET / Substitute of SSU2N60A
600V N-Channel B-FET / Substitute of SSR2N60A
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IRGBC30U |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, @Vge=15V, Ic=12A)
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V @Vge=15V Ic=12A)
|
IRF[International Rectifier]
|
